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Philips

PSMN063-150D Datasheet Preview

PSMN063-150D Datasheet

N-channel enhancement mode field-effect transistor

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PSMN063-150D
N-channel enhancement mode field-effect transistor
Rev. 03 — 31 October 2001
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
PSMN063-150D in SOT428 (D-PAK).
1.2 Features
s TrenchMOS™ technology
s Fast Switching
s Very low on-state resistance
s Low thermal resistance
1.3 Applications
s DC to DC converters
s Switched mode power supplies
1.4 Quick reference data
s VDS = 150 V
s Ptot = 150 W
s ID = 29 A
s RDSon 63 m
2. Pinning information
Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
[1]
mb
3 source (s)
mb connected to drain (d)
2
1
Top view
3
MBK091
[1] It is not possible to make a connection to pin 2 of the SOT428 package.
Symbol
d
g
MBB076
s
1. TrenchMOS™ is a trademark of Koninklijke Philips Electronics N.V.




Philips

PSMN063-150D Datasheet Preview

PSMN063-150D Datasheet

N-channel enhancement mode field-effect transistor

No Preview Available !

Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
Tj = 25 to 175 oC
Tj = 25 to 175 oC; RGS = 20 k
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
Tmb = 100 °C; VGS = 10 V;
Figure 2 and 3
IDM peak drain current
Tmb = 25 °C; pulsed; tp 10 µs;
Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
Tmb = 25 °C; Figure 1
IS source (diode forward) current (DC)
ISM peak source (diode forward) current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp 10 µs
EAS non-repetitive avalanche energy
IAS non-repetitive avalanche current
unclamped inductive load;
ID = 26 A; tp = 0.2 ms;
VDD 25 V; RGS = 50 ;
VGS = 10 V; starting Tj = 25 °C
unclamped inductive load;
VDD 25 V; RGS = 50 ;
VGS = 10 V; starting Tj = 25 °C
Min
55
55
Max
150
150
±20
29
20
116
150
+175
+175
29
116
502
29
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
A
9397 750 08594
Product data
Rev. 03 — 31 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
2 of 12


Part Number PSMN063-150D
Description N-channel enhancement mode field-effect transistor
Maker Philips
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