PSMN025-100D Datasheet | Philips Semiconductors

FEATURES - ’Trench’ technology - Very low on-state resistance - Fast switching - Low thermal resistance g QUICK REFERENCE DATA d SYMBOL VDSS = 100 V ID = 47 A RDS(ON) ≤ 25 mΩ s GENERAL DESCRIPTION Silicon MAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:- d.c. to d.c. converters - switched mode power supplies The PSMN025-100D is supplied in the SOT428 (Dpak) surface mounting package. PINNING PIN 1 2 3 tab gate drain1 source DESCRIPTION SOT428 (DPAK) tab 2 drain LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 100 100 ± 20 47 33 188 150 175 UNIT V V V A A A W ˚C 1 It is not possible to make connection to pin 2 of the SOT428 package. August 1999 1 Rev 1.000 Philips Semiconductors Product specification N-channel Trench MOS™ transistor AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy Non-repetitive avalanche current CONDITIONS Unclamped inductive load, IAS = 40 A; tp = 100 µs; Tj prior to avalanche = 25˚C; VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer to fig:15 MIN. - MAX. 260 UNIT m J - 47 THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT428 package, pcb mounted, minimum footprint TYP. MAX. UNIT 50 1 K/W K/W ELECTRICAL CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER...