PSMN009-100W
Description
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.
Key Features
- Very low on-state resistance
- Fast switching
- High thermal cycling performance
- Low SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 100 A g RDS(ON) ≤ 9 mΩ s
