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PSMN009-100W - N-channel TrenchMOS transistor

General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

The device has very low on-state resistance.

It is intended for use in dc to dc converters and general purpose switching applications.

Overview

Philips Semiconductors Objective specification TrenchMOS™ transistor.

Key Features

  • ’Trench’ technology.
  • Very low on-state resistance.
  • Fast switching.
  • High thermal cycling performance.
  • Low thermal resistance SYMBOL d QUICK.