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PSMN009-100P Datasheet Preview

PSMN009-100P Datasheet

N-channel enhancement mode field-effect transistor

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PSMN009-100P/100B
N-channel enhancement mode field-effect transistor
Rev. 01 — 29 April 2002
Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PSMN009-100P in SOT78 (TO-220AB)
PSMN009-100B in SOT404 (D2-PAK).
2. Features
s Low on-state resistance
s Fast switching.
3. Applications
s High frequency computer motherboard DC to DC converters
s OR-ing applications.
4. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78 and SOT404, simplified outline and symbol
Description
Simplified outline
gate (g)
drain (d)
[1]
mb
mb
source (s)
drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
Symbol
g
MBB076
d
s




Philips

PSMN009-100P Datasheet Preview

PSMN009-100P Datasheet

N-channel enhancement mode field-effect transistor

No Preview Available !

Philips Semiconductors
PSMN009-100P/100B
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
25 °C Tj 175 °C
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
VGSM
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
gate-source voltage
ID drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
25 °C Tj 175 °C
25 °C Tj 175 °C; RGS = 20 k
tp 50 µs; pulsed;
duty cycle 25%; T j 150 °C
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IS source (diode forward) current (DC)
ISM peak source (diode forward) current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp 10 µs
EDS(AL)S non-repetitive drain-source
avalanche energy
IDS(AL)S non-repetitive avalanche current
unclamped inductive load;
ID = 35 A; tp = 0.1 ms; VDD = 15 V;
RGS = 50 ; VGS = 10 V; starting Tj = 25 °C
unclamped inductive load;
VDD = 15 V; RGS = 50 ; VGS = 10 V;
starting Tj = 25 °C
Typ Max Unit
- 100 V
- 75 A
- 230 W
- 175 °C
7.5 8.8 m
Min Max Unit
- 100 V
- 100 V
- ±20 V
- ±30 V
- 75 A
- 65 A
- 400 A
- 230 W
55 +175 °C
55 +175 °C
- 75 A
- 400 A
- 120 mJ
- 75 A
9397 750 09158
Product data
Rev. 01 — 29 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
2 of 13


Part Number PSMN009-100P
Description N-channel enhancement mode field-effect transistor
Maker Philips
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PSMN009-100P Datasheet PDF






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