900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Philips

PSMN008-75B Datasheet Preview

PSMN008-75B Datasheet

N-channel enhancement mode field-effect transistor

No Preview Available !

PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
Rev. 01 — 18 September 2000
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PSMN008-75P in SOT78
PSMN008-75B in SOT404 (D2-PAK).
2. Features
s Fast switching
s Low on-state resistance
s Avalanche ruggedness rated.
3. Applications
s DC to DC converters
s Uninterruptable power supplies.
c
c
4. Pinning information
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
[1]
mb
mb
3 source (s)
mb connected to
drain (d)
123
MBK106
SOT78
2
1 3 MBK116
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Royal Philips Electronics.




Philips

PSMN008-75B Datasheet Preview

PSMN008-75B Datasheet

N-channel enhancement mode field-effect transistor

No Preview Available !

Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
Conditions
Tj = 25 to 175 °C
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
VGS = 10 V; ID = 25 A
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
Tj = 25 to 175 °C
Tj = 25 to 175 °C; RGS = 20 k
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
Tmb = 100 °C; VGS = 10 V;
Figure 2 and 3
IDM peak drain current
Tmb = 25 °C; pulsed; tp 10 µs;
Figure 2 and 3
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
Tmb = 25 °C; Figure 1
IS source (diode forward) current Tmb = 25 °C
(DC)
ISM
peak source (diode forward)
Tmb = 25 °C; pulsed; tp 10 µs
current
Avalanche ruggedness
EAS non-repetitive avalanche energy unclamped inductive load; ID = 75 A;
tp = 0.1 ms; VDD 15 V;
RGS = 50 ; VGS = 10 V; starting
Tj = 25 °C; Figure 4
IAS non-repetitive avalanche current unclamped inductive load;
VDD 15 V; RGS = 50 ;
VGS = 10 V; Figure 4
Typ Max
75
75
230
175
7.9 8.5
Unit
V
A
W
°C
m
Min Max
75
75
− ±20
75
75
240
230
55 +175
55 +75
75
240
Unit
V
V
V
A
A
A
W
°C
°C
A
A
360 mJ
75 A
9397 750 07495
Product specification
Rev. 01 — 18 September 2000
© Philips Electronics N.V. 2000. All rights reserved.
2 of 14


Part Number PSMN008-75B
Description N-channel enhancement mode field-effect transistor
Maker Philips
PDF Download

PSMN008-75B Datasheet PDF






Similar Datasheet

1 PSMN008-75B N-channel MOSFET
nexperia
2 PSMN008-75B N-channel enhancement mode field-effect transistor
Philips
3 PSMN008-75P N-channel enhancement mode field-effect transistor
Philips
4 PSMN008-75P N-channel TrenchMOS SiliconMAX standard level FET
NXP





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy