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PMEG2015EA - Low VF (MEGA) Schottky barrier diode

Description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package.

DESCRIPTION plastic surface mounted pac

Features

  • Forward current: 1.5 A.
  • Reverse voltage: 20 V.
  • Ultra high-speed switching.
  • Very low forward voltage.
  • Very small plastic SMD package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET PMEG2015EA Low VF (MEGA) Schottky barrier diode Product specification Supersedes data of 2003 May 20 2004 Feb 03 Philips Semiconductors Product specification Low VF (MEGA) Schottky barrier diode FEATURES • Forward current: 1.5 A • Reverse voltage: 20 V • Ultra high-speed switching • Very low forward voltage • Very small plastic SMD package. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEG2015EA − DESCRIPTION plastic surface mounted package; 2 leads Marking code: S5.