Philips Semiconductors
NPN general purpose transistor
Product specification
PMBT5088
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 30 V).
APPLICATIONS
• Intended for low-noise input stages in audio equipment.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN transistor in a SOT23 plastic package.
handbook, halfpage
3
3
MARKING
TYPE NUMBER
PMBT5088
MARKING CODE(1)
∗1Q
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
1
1
Top view
2
MAM255
2
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
35
30
4.5
100
200
200
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 15
2
