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Philips

PMBFJ109 Datasheet Preview

PMBFJ109 Datasheet

N-channel junction FETs

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DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ108;
PMBFJ109; PMBFJ110
N-channel junction FETs
Product specification
File under Discrete Semiconductors, SC07
April 1995




Philips

PMBFJ109 Datasheet Preview

PMBFJ109 Datasheet

N-channel junction FETs

No Preview Available !

Philips Semiconductors
N-channel junction FETs
Product specification
PMBFJ108;
PMBFJ109; PMBFJ110
FEATURES
High-speed switching
Interchangeability of drain and
source connections
Low RDSon at zero gate voltage
( < 8 for PMBFJ108).
DESCRIPTION
Symmetrical N-channel junction
FETs in a SOT23 envelope. Intended
for use in applications such as analog
switches, choppers and commutators
and in audio amplifiers.
handbook, halfpage
3
1
Top view
2
d
g
s
MAM385
PINNING - SOT23
PIN DESCRIPTION
1 drain
2 source
3 gate
Note
1. Drain and source are
interchangeable.
Fig.1 Simplified outline and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDS
VGSO
VGDO
IG
drain-source voltage
gate-source voltage
drain-drain voltage
forward gate current
(DC)
Ptot total power dissipation
Tstg storage temperature
Tj operating junction
temperature
CONDITIONS MIN. MAX. UNIT
− ±25 V
− −25 V
− −25 V
50 mA
Tamb = 25°C;
note 1
250 mW
65 150
150
°C
°C
April 1995
2


Part Number PMBFJ109
Description N-channel junction FETs
Maker Philips
Total Page 6 Pages
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