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PMBF4391 - N-channel FETs

Description

Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits.

The transistors are intended for low-power chopper or switching applications in industry.

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Datasheet Details

Part number PMBF4391
Manufacturer Philips
File Size 40.85 KB
Description N-channel FETs
Datasheet download datasheet PMBF4391 Datasheet
Additional preview pages of the PMBF4391 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET PMBF4391; PMBF4392; PMBF4393 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification N-channel FETs DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power chopper or switching applications in industry. PINNING 1 2 3 = drain = source = gate PMBF4391; PMBF4392; PMBF4393 handbook, halfpage 3 d s g 1 Top view 2 MAM385 Note 1. Drain and source are interchangeable. Marking code PMBF4391 = p6J PMBF4392 = p6K PMBF4393 = p6G Fig.1 Simplified outline and symbol, SOT23.
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