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Philips

PMBF107 Datasheet Preview

PMBF107 Datasheet

N-channel enhancement mode vertical D-MOS transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
PMBF107
N-channel enhancement mode
vertical D-MOS transistor
Product specification
File under Discrete Semiconductors, SC13b
April 1995




Philips

PMBF107 Datasheet Preview

PMBF107 Datasheet

N-channel enhancement mode vertical D-MOS transistor

No Preview Available !

Philips Semiconductors
N-channel enhancement mode vertical
D-MOS transistor
Product specification
PMBF107
FEATURES
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown.
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a SOT23
envelope and intended for use as a
line current interruptor in telephone
sets and for applications in relay,
high-speed and line transformer
drivers.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
RDS(on)
drain-source voltage
drain current
drain-source on-resistance
VGS(th) gate-source threshold voltage
PIN CONFIGURATION
CONDITIONS MAX. UNIT
200 V
DC value
100 mA
ID = 20 mA
VGS = 2.6 V
ID = 1 mA
VGS = VDS
28
2.4 V
PINNING - SOT23
ndbook, halfpage
3
handbook, 2 columns
d
PIN DESCRIPTION
1 gate
2 source
3 drain
1
Top view
2
MSB003
g
MBB076 - 1 s
Fig.1 Simplified outline and symbol.
April 1995
2


Part Number PMBF107
Description N-channel enhancement mode vertical D-MOS transistor
Maker Philips
Total Page 12 Pages
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