PHP8N50 Overview
Description
N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot RDS(ON) Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. 500 8.8 147 0.8 UNIT V A W Ω PINNING - TO220AB PIN DESCRIPTION 1 gate 2 drain 3 source tab drain.
