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SILICON RECTIFIER DIODES
Diffused silicon diodes in metal envelopes with ceramic insulation, intended for power rectifier application. The series consists of the following types: Normal polarity (cathode to stud): BYX32-600 to BYX32-1600 Reverse polarity (anode to stud): BYX32-600R to BYX32-1600R
QUICK REFERENCE DATA
Crest working reverse voltage VRWM
Repetitive peak reverse voltage
VRRM
600 800 1000 1200
_B_Y_X_32_--=-60.:...:0:....;,R-+-..:.8~00.:...:R~.....;1..:..0-=-00....:.R..:....j. 1200R
max.
600 800 1000 1200
1600 1600R
1200 v
max.
~60.:...:0~-=-8~00~~1~0~~0~1~2~0~0__~16.:...:0~0 v
Average forward current Non-repetitive peak forward cu rrent
max. max.
150
A
1600
A
MECHANICAL DATA
Dimensions in mm
022
- - 'r
insulating tube
-24'5~1~21J -50_ r . .
BYX32 Datasheet
