BY164 Datasheet | Philips Semiconductors

________________Jl___BY_164__ SILICON BRIDGE RECTIFIER Plastic-encapsulated bridge rectifier prising four silicon double-diffused diodes. It is primarily intended for use in the power supplies of many types of transistorised equipment operating at frequencies up to 400 Hz. QUICK REFERENCE DATA Input R.M.S. voltage Repetitive peak voltage Non-repetitive peak current Output Average current VI(RMS) VIRM IISM 10(AV) max. max. max. max. 60 V 120 V 25 A 1.2 A MECHANICAL DATA Fig. 1 SOD-28 chamfer to indicate positive r~t====::::::J Dimensions in mm 19 max -+ J 2II========:::J~ 1,05 t max _110 max 1---19 min The sealing of the plastic envelope withstands the accelerated damp heat test of I EC remendation 68-2 (test 0, severity IV, 6 cycles). January 1980 __B_Y164__Jl_______________ RATINGS Limiting values in accordance with the Absolute Maximum System (l Ee 134) Input R.M.S. voltage Crest working voltage Repetitive peak voltage Non repetitive peak voltage; t ~ 10 ms Non-repetitive peak current (see also Fig.8) Output Average current with e load Average current with Rand L load (see also Fig.5) VI(RMS) ~ 60 V Repetitive peak current Temperatures Storage temperature Junction temperature VI(RMS) VIWM VIRM VISM IISM max. max. max. max. max. 60 V 85 V 120 V 120 V 25 A See Figs. 3,6 IO(AV) IORM max. max. 1.2 A 5A Tstg -55 to +125 °e Tj max. 150 oe 'I ( January 1980 S_il_ic_on_b_r_id_ge_r_~_tif_ie_r ~~ ___ ______B_Y_1_6_4______...