BUK127-50GT - PowerMOS transistor

Philips Semiconductors (now NXP Semiconductors)

Key Features

Fast body diode eliminates the need for external diodes in ZVS.

BUK127-50GT powermos transistor by Philips Semiconductors (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	BUK127-50GT
Manufacturer	Philips Semiconductors (now NXP Semiconductors)
File Size	67.18 KB
Description	PowerMOS transistor
Datasheet	BUK127-50GT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD -97773 IRFR812TRPbF Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications HEXFET® Power MOSFET VDSS RDS(on) typ. Trr typ. 500V 1.85Ω 75ns D ID 3.6A Features and Benefits • Fast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate charge results in simpler drive requirements. • Higher Gate voltage threshold offers improved noise immunity. Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current Max. 3.6 2.3 14.4 78 0.63 ± 20 32 -55 to + 150 300 (1.6mm from case ) 10lb in (1.