BLV45-12 transistor equivalent, vhf power transistor.
* multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* gold metallization ensures excellent reliability
* internal match.
These products are not designed for use in life support appliances, devices, or systems where malfunction of these produ.
N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band. FEATURES
* multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* gold .
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