* multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
* internal matching to achieve an optimum wideband capability and high.

These products are not designed for use in life support appliances, devices, or systems where malfunction of these produ.

N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band. FEATURES
* multi-base structure and emitter-ballasting resistors for an optimum temperature .

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