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BF908R - Dual-gate MOS-FETs

Download the BF908R datasheet PDF. This datasheet also covers the BF908 variant, as both devices belong to the same dual-gate mos-fets family and are provided as variant models within a single manufacturer datasheet.

Description

Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package.

The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

The device is supplied in an antistatic package.

Features

  • High forward transfer admittance.
  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier up to 1 GHz.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BF908-Philips.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
BF908 Dual-gate MOS-FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET BF908; BF908R Dual-gate MOS-FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Dual-gate MOS-FETs Product specification BF908; BF908R FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS • VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. handbook, halfpage 4 3 1 Top view 2 g2 g1 MAM039 d s,b DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package.
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