2N1893 Datasheet | Philips Semiconductors

FEATURES - Low current (max. 500 m A) - Low voltage (max. 80 V). APPLICATIONS - High performance amplifiers - Oscillator and switching applications. 1 handbook, halfpage 2 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 DESCRIPTION NPN medium power transistor in a TO-39 metal package. MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot h FE PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain Tcase ≤ 25 °C IC = 150 m A; VCE = 10 V open emitter open base CONDITIONS - - - - 40 MIN. MAX. 120 80 1 3 120 UNIT V V A W 1997 Apr 17 Philips Semiconductors Product specification NPN medium power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation Tamb ≤ 25 °C Tcase ≤ 100 °C Tcase ≤ 25 °C Tstg Tj Tamb storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - - - - - - - 65 - - 65 MIN. MAX. 120 80 7 500 1 200 800 1.7 3 +150 200 +150 UNIT V V V m A A m A m W W W °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 219 58.3 UNIT K/W K/W CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 90 V IE = 0; VCB = 90 V; Tamb = 150 °C IC = 0; VEB = 5 V IC = 0.1 m A; VCE = 10 V IC = 10 m A; VCE = 10 V; Tamb = - 55 °C IC = 10 m A; VCE = 10 V; note 1 IC = 150 m A; VCE = 10 V; note 1 VCEsat VBEsat Cc Ce Note 1. Pulse test: tp ≤ 300 µs; δ = 0.02. collector-emitter...