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VTP8350 - VTP Process Photodiodes

Description

Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy.

These diodes exhibit low dark current under reverse bias and fast speed of response.

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Datasheet Details

Part number VTP8350
Manufacturer PerkinElmer Optoelectronics
File Size 26.49 KB
Description VTP Process Photodiodes
Datasheet download datasheet VTP8350 Datasheet
Additional preview pages of the VTP8350 datasheet.

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Full PDF Text Transcription

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VTP Process Photodiodes VTP8350 PACKAGE DIMENSIONS inch (mm) CASE 11 CERAMIC CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response.
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