Datasheet Details
| Part number | VTP8350 |
|---|---|
| Manufacturer | PerkinElmer Optoelectronics |
| File Size | 26.49 KB |
| Description | VTP Process Photodiodes |
| Download | VTP8350 Download (PDF) |
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Overview: VTP Process Photodiodes VTP8350 PACKAGE DIMENSIONS inch (mm) CASE 11 CERAMIC CHIP ACTIVE AREA: .012 in2 (7.
| Part number | VTP8350 |
|---|---|
| Manufacturer | PerkinElmer Optoelectronics |
| File Size | 26.49 KB |
| Description | VTP Process Photodiodes |
| Download | VTP8350 Download (PDF) |
|
|
|
Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy.
These diodes exhibit low dark current under reverse bias and fast speed of response.
ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP8350 SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Responsivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp.
| Part Number | Description |
|---|---|
| VTP8440 | VTP Process Photodiodes |
| VTP8551 | VTP Process Photodiodes |
| VTP8651 | VTP Process Photodiodes |
| VTP100 | VTP Process Photodiodes |
| VTP100C | VTP Process Photodiodes |
| VTP1012 | VTP Process Photodiodes |
| VTP1112 | VTP Process Photodiodes |
| VTP1188S | VTP Process Photodiodes |
| VTP1220FB | IR Blocking Silicon Photodiode |
| VTP1232 | VTP Process Photodiodes |