VTE1163 - GaAlAs Infrared Emitting Diodes

PerkinElmer Optoelectronics

VTE1163 Datasheet Preview — Preview of VTE1163 PDF

Datasheet Details

Part number	VTE1163
Manufacturer	PerkinElmer Optoelectronics
File Size	28.18 KB
Description	GaAlAs Infrared Emitting Diodes
Datasheet	VTE1163_PerkinElmerOptoelectronics.pdf

VTE1163 Product details

Description

CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.Coefficient of Power

📁 VTE1163 Similar Datasheet

VTE180-2F32342 - Photoelectric sensors (SICK)
VTE180-2F32444 - Photoelectric sensors (SICK)
VTE180-2F32447 - Photoelectric sensors (SICK)
VTE180-2F32449 - Photoelectric sensors (SICK)
VTE180-2F32482 - Photoelectric sensors (SICK)
VTE180-2F32484 - Photoelectric sensors (SICK)
VTE180-2F32487 - Photoelectric sensors (SICK)
VTE180-2F32489 - Photoelectric sensors (SICK)

Other Datasheets by PerkinElmer Optoelectronics

VTE1113 - GaAs Infrared Emitting Diodes
VTE1013 - GaAs Infrared Emitting Diodes
VTE1063 - GaAlAs Infrared Emitting Diodes
VTE1261 - GaAlAs Infrared Emitting Diodes
VTE1262 - GaAlAs Infrared Emitting Diodes
VTE1281-1 - GaAlAs Infrared Emitting Diodes

Published: Apr 17, 2005 |