Datasheet Details
| Part number | VTE1163 |
|---|---|
| Manufacturer | PerkinElmer Optoelectronics |
| File Size | 28.18 KB |
| Description | GaAlAs Infrared Emitting Diodes |
| Datasheet |
 VTE1163 Datasheet
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| Part number | VTE1163 |
|---|---|
| Manufacturer | PerkinElmer Optoelectronics |
| File Size | 28.18 KB |
| Description | GaAlAs Infrared Emitting Diodes |
| Datasheet |
VTE1163 Datasheet
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CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.
Coefficient of Power Output (Typ.): -55°C to 125°C 200 mW 2.11 mW/°C 100 mA 1.05 mA/°C 3A -.8%/°C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise: 1.0 µs Fall: 1.0 µs Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.) 5.0V 10 µA 880 nm 35 pF 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110) Output Irradiance Part Number Ee mW/cm2 Min.
GaAlAs Infrared Emitting Diodes TO-46 Lensed Package — 880 nm VTE1163 PACKAGE DIMENSIONS inch.
| Part Number | Description |
|---|---|
| VTE1113 | GaAs Infrared Emitting Diodes |
| VTE1013 | GaAs Infrared Emitting Diodes |
| VTE1063 | GaAlAs Infrared Emitting Diodes |
| VTE1261 | GaAlAs Infrared Emitting Diodes |
| VTE1262 | GaAlAs Infrared Emitting Diodes |
| VTE1281-1 | GaAlAs Infrared Emitting Diodes |
| VTE1281-2 | GaAlAs Infrared Emitting Diodes |
| VTE1281F | GaAlAs Infrared Emitting Diodes |
| VTE1281W-1 | GaAlAs Infrared Emitting Diodes |
| VTE1281W-2 | GaAlAs Infrared Emitting Diodes |