VTE1163 - GaAlAs Infrared Emitting Diodes

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PerkinElmer Optoelectronics

Datasheet Details

Part number	VTE1163
Manufacturer	PerkinElmer Optoelectronics
File Size	28.18 KB
Description	GaAlAs Infrared Emitting Diodes
Datasheet	VTE1163 Datasheet
Additional preview pages of the VTE1163 datasheet.

Product details

Description

CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.Coefficient of Power

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Published: Apr 17, 2005 |