This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.
| Part number | VTE1063 |
|---|---|
| Manufacturer | PerkinElmer Optoelectronics |
| File Size | 32.51 KB |
| Description | GaAlAs Infrared Emitting Diodes |
| Datasheet |
 VTE1063 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| VTE180-2F32342 | Photoelectric sensors | SICK |
| VTE180-2F32444 | Photoelectric sensors | SICK |
| VTE180-2F32447 | Photoelectric sensors | SICK |
| VTE180-2F32449 | Photoelectric sensors | SICK |
| VTE180-2F32482 | Photoelectric sensors | SICK |
| Part Number | Description |
|---|---|
| VTE1013 | GaAs Infrared Emitting Diodes |
| VTE1113 | GaAs Infrared Emitting Diodes |
| VTE1163 | GaAlAs Infrared Emitting Diodes |
| VTE1261 | GaAlAs Infrared Emitting Diodes |
| VTE1262 | GaAlAs Infrared Emitting Diodes |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
