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Pericom Semiconductor

PI3B16215 Datasheet Preview

PI3B16215 Datasheet

20-Bit FET

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PI3B16215
1122334455667788990011223344556677889900112233445566778899001122112233445566778899001122334455667788990011223344556677889900112211223344556677889900112233445566778899001122334455667788990011221122334455667788990011223344556677889900112233445566778899001122112233445566778899001122
3.3V, Hot Insertion, 20-Bit FET
BusSwitch w/Precharged Outputs
Product Features
• Near Zero Propagation Delay
• 5Switches Connect Between Two Ports
• Fast Switching Speed: 4.5ns max.
• Permits Hot Insertion
• Isolation during Power-Off conditions
• B-Port Outputs are precharged by Bias Voltage
to minimize signal distortion during live insertion
• Package options include:
– 48-pin 150-mil wide plastic BQSOP (B)
– 48-pin 240-mil wide plastic TSSOP (A)
– 48-pin 300-mil wide plastic SSOP (V)
Logic Block Diagram
1A1 2
SW
1 BIASV
46 1B1
Product Description
Pericom Semiconductor’s PI3B series of logic circuits are produced
using the company’s advanced 0.35 micron CMOS Technology.
The PI3B16215 provides 20-bits of high-speed bus switching. Low
on-state resistance of the switch allows connections to be made
with minimal propagation delay. The device also precharges the
B-port to a user-selectable bias voltage (BIASV) to minimize live-
insertion noise.
The device is organized as dual 10-bit bus switches with individual
output-enable (OE) inputs. When OE is LOW, the corresponding
10-bit bus switch is on and port A is connected to port B. When OE
is HIGH, the switch is open, a high-impedance state exists between
the two ports, and port B is precharged to BIASV through the
equivalent of a 10-kresistor.
To ensure the high-impedance state on power up or power down,
OE should be tied to VCC through a pullup resistor; the minimum
value of the resistor is determined by the current-sinking capability
of the driver connected to OE.
Product Pin Configuration
1A10 12
1OE 48
2A1 13
2A10 24
47
2OE
SW
SW
SW
A
36 1B10
35
2B1
25 2B10
B
BIASV
1A 1
1A 2
1A3
1A 4
1A 5
1A 6
GND
1A7
1A 8
1A 9
1A10
2 A1
2A 2
Vcc
2A3
GND
2A4
2A5
2A6
2A7
2A8
2A9
2 A 10
1 48
2 47
3 46
4 45
5 44
6 43
7 42
8 41
9 40
10 48-Pin 39
11 A,B,V 38
12 37
13 36
14 35
15 34
16 33
17 32
18 31
19 30
20 29
21 28
22 27
23 26
24 25
1 OE
2 OE
1B1
1B2
1B3
1 B4
1B5
GND
1B6
1B7
1B8
1B9
1B 10
2 B1
2 B2
2 B3
GND
2 B4
2B5
2 B6
2B7
2B8
2 B9
2 B 10
OE
1
PS8190D
05/04/00




Pericom Semiconductor

PI3B16215 Datasheet Preview

PI3B16215 Datasheet

20-Bit FET

No Preview Available !

PI3B16215
3.3V, Hot Insertion,
1122334455667788990011223344556677889900112233445566778899001122112233445566778899001122334455667788990011223344556677889900112211223344556677889900112233445566778829900011-22B3344i55t66F7788E9900T1122B1122u3344s55S6677w8899i00t11c22h3344w556677/88P99r0011e22c33h4455a6677r88g9900e11d2211O2233u4455t66p7788u9900t11s22
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature Range, TSTG ...................................... –65ºC to +150ºC
Supply Voltage Range, VCC ......................................... –0.5V to +4.6V
Bias Voltage Range, BIASV ........................................ –0.5V to +4.6V
Input Voltage Range ........................................................–0.5V to +4.6V
DC Output Current ....................................................................... 120mA
Power Dissipation ............................................................................ 0.5W
Note:
Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Electrical Characteristics (Over the Operating Range, TA = –40°C to +85°C, VCC = 3.0V to 3.6V)
Parameter
Description
Test Conditions
Min. Typ. Max. Units
BIASV
VIH
VIL
Bias Voltage
High-Level Control Input Voltage
Low-Level Control Input Voltage
VCC = 2.7V to 3.6V
VCC = 2.7V to 3.6V
0 VCC
2
V
–0.5 0.8
VIK
II
IOZH
IO
ICC
Clamp Diode Voltage
Input Current
High Impedance Output Current
Output Current
Quiescent Power Supply Current
ICC(1) Supply Current
VCC = 3.0V
VCC = 3.6V
VCC = 0
VCC = 3.0V
VCC = 3.6V
VCC = 3.6V
II = –18mA
–0.7 –1.2
VI = VCC or GND
VI = VO = 0 to 3.6V
±5
µA
10
BIASV = 2.4V, VO = 0 0.15
mA
IO = 0, VI = VCC or GND
10
One Input at 3V,
Other Inputs at VCC or
GND
µA
750
CIN
COFF
Input Capacitance
A/B Capacitance Switch Off
VI = 3.0V or 0
VO = 3.0V or
0
Switch Off
3.0
pF
8.5
RON(2) Switch On Resistance
VI = 0
II = 64mA
II = 24mA
58
5 8
VI = 2.4V
II = 15mA
10 15
Notes:
1. This is the increase in supply current for each input (OE only) that is at the specified voltage level rather than VCC or GND.
2. Measured by the voltage drop between the A and B terminals at the indicated current through the switch. On state
resistance is determined by the lower of the voltages of the two (A or B) terminals.
Truth Table
OE Function
L A port = B port
H A port = Z, B Port = BIASV
2
PS8190D
05/04/00


Part Number PI3B16215
Description 20-Bit FET
Maker Pericom Semiconductor
PDF Download

PI3B16215 Datasheet PDF






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