PE43508 Datasheet | pSemi

Features - Wideband support up to 55 GHz - Glitch-safe attenuation state transitions - Flexible attenuation steps of 0.5 d B and 1 d B up to 31.5 d B - Extended +105 °C operating temperature - Parallel and serial programming interfaces with serial addressability - Flip-chip die Applications - Test and measurement (T&M) - Point-to-point munication systems - Very small aperture terminals (VSAT) Figure 1 - PE43508 Functional Diagram Switched Attenuator Array RF Input RF Output Parallel Control 6-bit Serial In Control Logic Interface Serial Out A0 A1 A2 (optional) P/S VDD VSS_EXT Product Description The PE43508 is a 50Ω, Ha RP™ technology-enhanced, 6-bit RF digital step attenuator (DSA) that supports a wide frequency range from 9k to 55 GHz. The PE43508 features glitch-safe attenuation state transitions, supports 1.8V control voltage and optional VSS_EXT bypass mode to improve spurious performance, making this device ideal for test and measurement, point-to-point munication systems, and very small aperture terminals (VSAT). The PE43508 provides an integrated digital control interface that supports both serial addressable and parallel programming of the attenuation. The PE43508 covers a 31.5 d B attenuation range in 0.5 d B and 1 d B steps. It is capable of maintaining 0.5 d B and 1 d B monotonicity through 55 GHz. In addition, no external blocking capacitors are required if 0 VDC is present on the RF ports. The PE43508 is manufactured on p Semi’s Ultra CMOS® process, a patented variation of silicon-on-insulator (SOI) technology. ©2018-2023, p Semi Corporation. All rights reserved. - Headquarters: 9369 Carroll Park Drive, San Diego, CA, 92121 Product Specification .psemi. DOC-84244-5 - (09/2023) PE43508 RF Digital Step Attenuator p Semi’s Ha RP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the Ultra CMOS process, offering the performance of Ga As with the economy and integration of conventional...