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Peregrine Semiconductor

PE43508 Datasheet Preview

PE43508 Datasheet

RF Digital Step Attenuator

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PE43508
Document Category: Product Specification
UltraCMOS® RF Digital Step Attenuator, 9 kHz–55 GHz
Features
• Wideband support up to 55 GHz
• Glitch-safe attenuation state transitions
• Flexible attenuation steps of 0.5 dB and 1 dB up to
31.5 dB
• Extended +105 °C operating temperature
• Parallel and serial programming interfaces with
serial addressability
• Flip-chip die
Figure 1 • PE43508 Functional Diagram
Switched Attenuator Array
RF
Input
RF
Output
Applications
• Test and measurement (T&M)
• Point-to-point communication systems
• Very small aperture terminals (VSAT)
Parallel
Control
6-bit
Serial In
CLK
Control Logic Interface
Serial Out
LE
A0 A1 A2
(optional)
P/S VDD VSS_EXT
Product Description
The PE43508 is a 50, HaRP™ technology-enhanced, 6-bit RF digital step attenuator (DSA) that supports a
wide frequency range from 9k to 55 GHz. The PE43508 features glitch-safe attenuation state transitions,
supports 1.8V control voltage and optional VSS_EXT bypass mode to improve spurious performance, making this
device ideal for test and measurement, point-to-point communication systems, and very small aperture
terminals (VSAT).
The PE43508 provides an integrated digital control interface that supports both serial addressable and parallel
programming of the attenuation. The PE43508 covers a 31.5 dB attenuation range in 0.5 dB and 1 dB steps. It is
capable of maintaining 0.5 dB and 1 dB monotonicity through 55 GHz. In addition, no external blocking capac-
itors are required if 0 VDC is present on the RF ports.
The PE43508 is manufactured on pSemi’s UltraCMOS® process, a patented variation of silicon-on-insulator
(SOI) technology.
©2018, pSemi Corporation. All rights reserved. • Headquarters: 9369 Carroll Park Drive, San Diego, CA, 92121
Product Specification
www.psemi.com
DOC-84244-4 – (10/2018)




Peregrine Semiconductor

PE43508 Datasheet Preview

PE43508 Datasheet

RF Digital Step Attenuator

No Preview Available !

PE43508
RF Digital Step Attenuator
pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
Optional External VSS Control
For proper operation, the VSS_EXT control pin must be grounded or tied to the VSS voltage specified in Table 2.
When the VSS_EXT control pin is grounded, FETs in the switch are biased with an internal negative voltage
generator. For applications that require the lowest possible spur performance, VSS_EXT can be applied externally
to bypass the internal negative voltage generator.
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be
restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 • Absolute Maximum Ratings for the PE43508
Parameter/Condition
Positive supply voltage, VDD
Negative supply voltage, VSS_EXT
Digital input voltage
Peak RF input power, 50
Maximum junction temperature
Storage temperature range
ESD voltage HBM, all pins(*)
Note: * Human body model (MIL–STD 883 Method 3015)
Min
–0.3
–3.6
–0.3
–65
Max
5.5
0.3
3.6
Fig. 7
+150
+150
1000
Unit
V
V
V
dBm
°C
°C
V
Page 2 of 25
www.psemi.com
DOC-84244-4 – (10/2018)


Part Number PE43508
Description RF Digital Step Attenuator
Maker Peregrine Semiconductor
Total Page 25 Pages
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