SP8T RF Switch
Optional External VSS
For proper operation, the VSS_EXT pin must be grounded or tied to the VSS voltage specified in Table 2. When the
VSS_EXT pin is grounded, FETs in the switch are biased with an internal negative voltage generator. For applica-
tions that require the lowest possible spur performance, VSS_EXT can be applied externally to bypass the internal
negative voltage generator.
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be
restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in Table 1.
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 • Absolute Maximum Ratings for PE42582
Supply voltage, VDD
Digital input voltage (V1, V2, V3, V4, LS)
RF input power (RFC–RFX, 50Ω)
RF input power into terminated ports, CW(1) (RFX, 50Ω)
Maximum junction temperature
Storage temperature range
ESD voltage HBM, all pins(2)
ESD voltage CDM, all pins(3)
1) 100% duty cycle, all bands, 50Ω.
2) Human body model (MIL-STD 883 Method 3015).
3) Charged device model (JEDEC JESD22-C101).
See Figure 2
See Figure 2
DOC-76247-3 – (03/2017)