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Peregrine Semiconductor

PE42553 Datasheet Preview

PE42553 Datasheet

SPDT RF Switch

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PE42553
Document Category: Product Specification
UltraCMOS® SPDT RF Switch, 9 kHz–8 GHz
Features
• Excellent power handling: 36 dBm CW and 38 dBm
pulsed power in 50Ω @ 8 GHz
• High linearity: IIP3 of 66 dBm
• High isolation
45 dB @ 3 GHz
41 dB @ 8 GHz
• HaRP™ technology enhanced
Fast settling time
No gate and phase lag
No drift in insertion loss and phase
• High ESD performance
2.5 kV HBM on all pins, 4 kV HBM on RF pins to
GND
1 kV CDM on all pins
• Packaging – 16-lead 3 × 3 mm QFN
Applications
• Test and measurement
Signal sources
Communication testers
Spectrum analyzers
Network analyzers
• Automated test equipment
• General purpose TX/RX switch
Figure 1 • PE42553 Functional Diagram
RFC
RF1
50Ω 50Ω
CMOS Control Driver and ESD
LS CTRL VSS_EXT
RF2
Product Description
The PE42553 is a HaRPTM technology-enhanced absorptive SPDT RF switch that supports a broad frequency
range from 9 kHz to 8 GHz. This general purpose switch maintains excellent linearity, high RF performance and
fast settling time making this device ideal for test and measurement (T&M), automated test equipment (ATE)
and other high performance wireless applications.
The PE42553 is a pin-compatible version of the PE42552 with improved power handling capability of 36 dBm
continuous wave (CW) and 38 dBm pulsed power in 50Ω at 8 GHz. No blocking capacitors are required if DC
voltage is not present on the RF ports. The PE42553 is manufactured on pSemi’s UltraCMOS® process, a
patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate.
©2016, 2018 pSemi Corporation. All rights reserved. • Headquarters: 9369 Carroll Park Drive, San Diego, CA, 92121
Product Specification
www.psemi.com
DOC-76991-2 – (11/2018)




Peregrine Semiconductor

PE42553 Datasheet Preview

PE42553 Datasheet

SPDT RF Switch

No Preview Available !

PE42553
SPDT RF Switch
pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
Optional External VSS
For proper operation, the VSS_EXT pin must be grounded or tied to the VSS voltage specified in Table 2. When the
VSS_EXT pin is grounded, FETs in the switch are biased with an internal negative voltage generator. For applica-
tions that require the lowest possible spur performance, VSS_EXT can be applied externally to bypass the internal
negative voltage generator.
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be
restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 • Absolute Maximum Ratings for PE42553
Parameter/Condition
Supply voltage, VDD
Digital input voltage, CTRL
LS input voltage
RF input power, CW (RFC–RFX)(1)
9 kHz–10 MHz
>10 MHz–8 GHz
RF input power, pulsed (RFC–RFX)(2)
9 kHz–10 MHz
>10 MHz–8 GHz
RF input power into terminated ports, CW (RFX)(1)
9–800 kHz
>800 kHz–8 GHz
Maximum junction temperature
Storage temperature range
Min
–0.3
–0.3
–0.3
–65
Max
5.5
3.6
3.6
Unit
V
V
V
Fig. 2, Fig. 3
37
dBm
dBm
Fig. 2, Fig. 3
Fig. 4, Fig. 5
dBm
dBm
Fig. 2, Fig. 3
28
+150
+150
dBm
dBm
°C
°C
Page 2 of 20
www.psemi.com
DOC-76991-2 – (11/2018)


Part Number PE42553
Description SPDT RF Switch
Maker Peregrine Semiconductor
Total Page 20 Pages
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