Datasheet4U Logo Datasheet4U.com

PE423641 - SP4T RF Switch

Description

The PE423641 is a HaRP™ technology-enhanced reflective SP4T RF switch.

It has received AEC-Q100 Grade 2 certification and meets the quality and performance standards that makes it suitable for use in harsh automotive environments.

Features

  •  AEC-Q100 Grade 2 certified.
  •  Supports operating temperature up to +105°C.
  •  HaRPTM technology enhancements provide excellent linearity.
  •  Low harmonics of 2fo =.
  • 83 dBc and 3fo =.
  • 77 dBc @ +35 dBm.
  •  IMD3 of.
  • 111 dBm @ WCDMA band 1.
  •  IIP3 of 68 dBm.
  •  Low insertion loss.
  •  0.50 dB @ 1000 MHz.
  •  0.65 dB @ 2200 MHz.
  •  High isolation.
  •  32 dB @ 1000 MHz.
  •  25 dB @ 2200 MHz.
  •  High ESD performance.
  •  2 kV HBM on all.

📥 Download Datasheet

Datasheet preview – PE423641

Datasheet Details

Part number PE423641
Manufacturer Peregrine Semiconductor
File Size 340.16 KB
Description SP4T RF Switch
Datasheet download datasheet PE423641 Datasheet
Additional preview pages of the PE423641 datasheet.
Other Datasheets by Peregrine Semiconductor

Full PDF Text Transcription

Click to expand full text
ESD Product Description The PE423641 is a HaRP™ technology-enhanced reflective SP4T RF switch. It has received AEC-Q100 Grade 2 certification and meets the quality and performance standards that makes it suitable for use in harsh automotive environments. It is designed to cover a wide range of wireless applications from 50 MHz through 3 GHz such as cellular antenna band switching, automotive infotainment and traffic safety applications. No blocking capacitors are required if DC voltage is not present on the RF ports. The PE423641 is manufactured on Peregrine’s UltraCMOS® process, a patented variation of silicon-oninsulator (SOI) technology on a sapphire substrate, offering excellent RF performance.
Published: |