XN4502 - Silicon NPN epitaxial planer transistor

Panasonic

Key Features

0.5.
0.05 +0.1 +0.1 1 Composite Transistors PT.
Ta 500 800 700 XN4502 IC.
VCE Ta=25˚C IB=10mA IC.
I B 800 700 VCE=10V Ta=25˚C Total power dissipation PT (mW) Collector current IC (mA) 600 500 400 300 200 100 Collector current IC (mA) 20 400 300 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 600 500 400 300 200 100 0 200 100 0 0 40 80 120 160 0 0 4 8 12 16 0 2 4 6 8 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current.

XN4502 silicon npn epitaxial planer transistor by Panasonic - Datasheet Preview

Datasheet Details

Part number	XN4502
Manufacturer	Panasonic
File Size	34.13 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN4502 Datasheet

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Composite Transistors XN4502 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 0.65±0.15 6 0.95 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 q 2SD602A × 2 elements 1.1–0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 60 50 5 0.