The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Composite Transistors
XN1872
Silicon N-channel • Enhancement MOS FET
Unit: mm
For switching
2.8 -0.3 0.65±0.15
+0.2 +0.25
1.5 -0.05 5
0.65±0.15 1
0.95
2.9 -0.05
q
q
Two elements incorporated into one package. (Source-coupled FETs) Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
4
0.95
3
2 0.3 -0.05 0.4±0.2 0.16 -0.06
+0.1
1.1 -0.1
q
2SK621 × 2 elements
0.8
s Basic Part Number of Element
+0.2
s Absolute Maximum Ratings
Parameter Drain to source voltage Rating Gate to source voltage of element Drain current Total power dissipation Overall Channel temperature Storage temperature Symbol VDSS VGSO ID IDM PT Tch Tstg
(Ta=25˚C)
Ratings 50 8 100 200 300 150 –55 to +150 Unit V V mA mA mW ˚C ˚C
1 : Drain (Tr1) 2 : Drain (Tr2) 3 : Gate (Tr2)
0 to 0.
XN1872 Datasheet
