Suitable for high-density mounting and downsizing of the equipment.
Contribute to low power consumption
0.23+0.05.
0.02 0.33+0.05.
0.02 3 0.15 min. 0.80±0.05 1.20±0.05 0.10+0.05.
0.02
Unit: mm
(0.40) (0.40) 0.80±0.05 1.20±0.05 5°
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO IC PT Tj Tstg
Rating 50 50 80 100.
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Transistors with built-in Resistor
UNR32AE
Silicon NPN epitaxial planar type
For digital circuits Features
Suitable for high-density mounting and downsizing of the equipment Contribute to low power consumption
0.23+0.05 –0.02 0.33+0.05 –0.02 3 0.15 min. 0.80±0.05 1.20±0.05 0.10+0.05 –0.02
Unit: mm
(0.40) (0.40) 0.80±0.05 1.20±0.05 5°
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO IC PT Tj Tstg
Rating 50 50 80 100 125 –55 to +125
Unit V V mA mW °C °C
1: Base 2: Emitter 3: Collector
0.15 min.
Absolute Maximum Ratings Ta = 25°C
1
2
0 to 0.01
0.52±0.
UNR32AE Datasheet
