Suitable for high-density mounting and downsizing of the equipment.
Contribute to low power consumption
0.33+0.05.
0.02 3
0.10+0.05.
0.02
(0.40) (0.40) 0.80±0.05 1.20±0.05.
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating.
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Transistors with built-in Resistor
UNR31A3
Silicon PNP epitaxial planar transistor
Unit: mm
For digital circuits ■ Features
• Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption
0.33+0.05 –0.02 3
0.10+0.05 –0.02
(0.40) (0.40) 0.80±0.05 1.20±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating −50 −50 −80 100 125 −55 to +125 Unit V V mA mW °C °C
5°
0.15 min.
0.23+0.05 –0.02
1
2
0 to 0.01
0.52±0.
UNR31A3 Datasheet
