UN4221
UN4221 is Silicon NPN epitaxial planer transistor manufactured by Panasonic.
Features
R2
E s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current UN4221 UN4222 UN4223/4224
(Ta=25˚C)
Symbol ICBO ICEO IEBO VCBO VCEO h FE VCE(sat) VOH VOL R1 Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 IC = 10µA, IE = 0 IC = 2m A, IB = 0 VCE = 10V, IC = 100m A IC = 100m A, IB = 5m A VCC = 5V, VB = 0.5V, RL = 500Ω VCC = 5V, VB = 3.5V, RL = 500Ω 2.2 (- 30%) 4.7 10 R1/R2 0.8 0.17 1.0 0.22 1.2 0.27 (+30%) kΩ 4.9 0.2 50 50 40 50 60 0.25 V V V min typ max 1 1 5 2 1 V V m A Unit µA µA
Collector to base voltage Collector to emitter voltage Forward current transfer ratio UN4221 UN4222 UN4223/4224
Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance UN4221/4224 UN4222 UN4223
Resistance ratio UN4224
Transistors with built-in Resistor mon characteristics chart PT
- Ta
UN4221/4222/4223/4224
Total power dissipation PT (m W)
350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UN4221 IC
- VCE
300 100
VCE(sat)
- IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C IC/IB=10 400 h FE
- IC
VCE=10V
IB=1.0m A 250
30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 1 3 10 30 100 300 1000
Collector current IC (m A)
0.9m A 200 0.8m A 0.7m A 150 0.6m A 0.5m A 100 0.4m A 0.3m A 50 0.2m A 0 0 2 4 6 8 0.1m A 10 12
Forward current transfer ratio h FE
Ta=75˚C
25˚C 100
- 25˚C
- 25˚C 0 1 3 10 30 100 300 1000
Collector to emitter voltage VCE...