UN2123

The UN2123 is Silicon PNP epitaxial planer transistor designed by Panasonic Semiconductor.

Product Overview

Panasonic Semiconductor

Datasheet Details

Part number	UN2123
Manufacturer	Panasonic Semiconductor
File Size	84.91 KB
Description	Silicon PNP epitaxial planer transistor
Datasheet	UN2123_PanasonicSemiconductor.pdf
Additional preview pages of the UN2123 datasheet.

Product details

Description

emitter saturation voltage VCE(sat) (V) Ta=25˚C 200 Forward current transfer ratio hFE 30 10 3 1 0.3 0.1 0.03 0.01 1 Ta=75˚C 25˚C 25˚C 200 Collector current IC (mA) IB= 1.2mA 160 1.0mA 0.8mA 0.6mA 80 0.4mA 40 0.2mA 0 0 2 4 6 8 10 12 160 Ta=75˚C 25˚C

Features

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 2.8.
0.3 0.65±0.15 +0.2 Unit: mm 0.65±0.15 1.5.
0.05 +0.25 0.95 2.9.
0.05 1 1.9±0.2 +0.2 0.95 3 1.45 0 to 0.1 2 s Resistance by Part Number 1.1.
0.1 +0.2 q q q q q q UN2121 UN2122 UN2123 UN2124 UN212X UN212Y Marking Symbol (R1) 7A 2.

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Other Datasheets by Panasonic Semiconductor

UN2121 - Silicon PNP epitaxial planer transistor
UN2122 - Silicon PNP epitaxial planer transistor
UN2124 - Silicon PNP epitaxial planer transistor
UN212X - Silicon PNP epitaxial planer transistor
UN212Y - Silicon PNP epitaxial planer transistor
UN2110 - Silicon PNP epitaxial planer transistor

Published: Apr 17, 2005 |