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Panasonic Electronic Components Datasheet

PNZ331F Datasheet

PIN Photodiode

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PIN Photodiodes
PNZ331F
PIN Photodiode
For optical fiber communication systems
Features
Metal package with shield pin
High coupling capability suitable for plastic fiber and glass fiber
High quantum efficiency
High-speed response
Unit : mm
3-ø0.45±0.04
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
VR
PD
Topr
Tstg
Ratings
30
50
– 25 to +100
– 40 to +100
Unit
V
mW
˚C
˚C
2
31
1: Anode
2: Case
3: Cathode
Dimensions of detection area
Unit : mm
1.1
0.88
Active region
A1
ø0.1
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
Photo current
Peak sensitivity wavelength
Frequency characteristics
ID VR = 10V
IL VR = 10V, L = 1000 lx*1
λP VR = 10V
fC*2 VR = 10V, RL = 50
0.1 10 nA
47
µA
900 nm
50 MHz
Capacitance between pins Ct VR = 10V
3
Photodetection sensitivity R VR = 10V, λ = 800nm
0.45 0.55
Acceptance half angle
θ Measured from the optical axis to the half power point
40
pF
A/W
deg.
Photodetection surface shape D Effective photodetection area
0.88 mm
Note 1) Spectral sensitivity : Sensitivity at wavelengths exceeding 400 nm as a percentage, is 100% to maximum sensitivity.
Note 2) This product is not designed to withstand electromagnetic radiation or heavy-charge particles.
Note 3) The glass strength of this product cannot withstand loads of 0.5 kg or greater. This fact needs to be taken into consideration
if optical fibers are to be mounted on the product.
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit (see figure below) Note : Detection photo current –3 dB
λP = 800nm
Sig.IN
50
VR = 10V
(Input pulse)
Sig.OUT
(Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current
to increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current
to decrease from 90% to 10% of its initial value)
1


Panasonic Electronic Components Datasheet

PNZ331F Datasheet

PIN Photodiode

No Preview Available !

PNZ331F
PIN Photodiodes
PD — Ta
60
50
40
30
20
10
0
– 25 0
20 40 60 80 100
Ambient temperature Ta (˚C )
IL — L
10 2
VR = 10V
Ta = 25˚C
T = 2856K
10
1
10 –1
10 –2
10
10 2 10 3
Illuminance L (lx)
10 4
IL — P
10 2
VR = 10V
Ta = 25˚C
λ = 800nm
10
1
10 –1
10 –2
10 –1
1
10 10 2
Incident photo power P (µW)
ID — VR
1
Ta = 25˚C
10 –1
10 –2
0
8 16 24
Reverse voltage VR (V)
32
IL — Ta
160 VR = 10V
L = 1000 lx
T = 2856K
120
80
40
0
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
10 3
VR = 10V
ID — Ta
10 2
10
1
10 –1
10 –2
10 –3
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
IL — Ta
160
VR = 10V
L = 1000 lx
120
80
40
0
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
Spectral sensitivity characteristics
100 VR = 10V
Ta = 25˚C
80
60
40
20
0
200 400 600 800 1000 1200
Wavelength λ (nm)
Frequency characteristics
6 VR = 10V
RL = 50
4 Ta = 25˚C
2
0
–2
–4
–6
–8
– 10
1
10 10 2
Frequency f (MHz)
10 3
2


Part Number PNZ331F
Description PIN Photodiode
Maker Panasonic Semiconductor
Total Page 3 Pages
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