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PNZ331CL Datasheet

PIN Photodiode

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PIN Photodiodes
PNZ331CL
PIN Photodiode
For optical fiber communication systems
Features
TO-18 standard type package
High coupling capability suitable for plastic fiber
High quantum efficiency
High-speed response
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
VR
PD
Topr
Tstg
Ratings
30
50
–25 to +85
–30 to +100
Unit
V
mW
˚C
˚C
Unit : mm
3-ø0.45±0.04
2
31
1: Anode
2: Case
3: Cathode
Dimensions of detection area
1.1 Unit : mm
0.88
Active region
A1
ø0.1
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
ID VR = 10V
0.1 10 nA
Photo current
IL VR = 10V, L = 1000 lx*1
7 14
µA
Peak sensitivity wavelength
λP VR = 10V
900 nm
Response time
tr, tf*2 VR = 10V, RL = 50
2 ns
Capacitance between pins Ct VR = 10V
3 pF
Photodetection sensitivity R VR = 10V, λ = 800nm
0.55 A/W
Acceptance half angle
θ Measured from the optical axis to the half power point
70
deg.
Photodetection surface shape D Effective detection area
0.88 mm
Note 1) Spectral sensitivity: Sensitivity at wavelengths exceeding 400 nm as a percentage of maximum sensitivity is 100%
Note 2) This product is not designed to withstand electromagnetic radiation or heavy-charge particles.
Note 3) Difficult to guarantee compliance with moisture resistance standard (MIL-STD-202D)
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit (see figure below)
λP = 800nm
Sig.IN
50
VR = 10V
(Input pulse)
Sig.OUT
RL
(Output pulse) td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current
to increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current
to decrease from 90% to 10% of its initial value)
1


Panasonic Electronic Components Datasheet

PNZ331CL Datasheet

PIN Photodiode

No Preview Available !

PIN Photodiodes
PNZ331CL
PD — Ta
60
50
40
30
20
10
0
– 25 0
20 40 60 80 100
Ambient temperature Ta (˚C )
IL — L
10 2
VR = 10V
Ta = 25˚C
T = 2856K
10
1
10 –1
10 –2
10
10 2 10 3
Illuminance L (lx)
10 4
IL — P
10 2
VR = 10V
Ta = 25˚C
λ = 800nm
10
1
10 –1
10 –2
10
10 2 10 3 10 4
Incident photo power P (µW)
ID — VR
1
Ta = 25˚C
10 –1
10 –2
0
8 16 24
Reverse voltage VR (V)
32
10 3
VR = 10V
ID — Ta
10 2
10
1
10 –1
10 –2
10 –3
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
R — Ta
160
VR = 10V
λ = 800nm
120
80
40
0
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
IL — Ta
160 VR = 10V
L = 1000 lx
T = 2856K
120
80
40
0
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
Spectral sensitivity characteristics
100 VR = 10V
Ta = 25˚C
80
60
40
20
0
200 400 600 800 1000 1200
Wavelength λ (nm)
Frequency characteristics
6
4
2
0
–2
–4
–6
–8
– 10
1
10 10 2
Frequency f (MHz)
10 3
2


Part Number PNZ331CL
Description PIN Photodiode
Maker Panasonic Semiconductor
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PNZ331CL Datasheet PDF






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Panasonic Semiconductor





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