Darlington Phototransistors
PNZ263L
Darlington Phototransistor
For optical control systems
Features
Darlington output, high sensitivity
Small size, thin side-view type package
Adoption of visible light cutoff resin
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VECO
IC
PC
Topr
Tstg
Ratings
20
5
30
100
–25 to +80
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
3.0±0.3
Unit : mm
ø1.1
R0.5
1.95±0.25
1.4±0.2
0.9 0.5
2-0.8 max.
2-0.8 max.
2-0.5±0.15
21
2.54
0.3±0.15
1: Collector
2: Emitter
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
ICEO VCE = 10V
0.1 0.5 µA
Sensitivity to infrared emitters SIR*1 VCE = 10V, H = 3.75 µW/cm2
60 200
µA
Peak sensitivity wavelength λP VCE = 10V
850 nm
Acceptance half angle
θ Measured from the optical axis to the half power point
25
deg.
Response time
tr, tf*2 VCC = 10V, IC = 1mA, RL = 100Ω
Collector saturation voltage VCE(sat) IC = 100µA, H = 3.75 µW/cm2
150
0.7 1.5
µs
V
*1 Measurements were made using infrared light (λ = 940 nm) as a light source.
*2 Switching time measuring circuit
Sig.IN
50Ω
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1
