PNA4S02M
PNA4S02M is Photodetection manufactured by Panasonic.
Features
Surface-mouting type for reflow soldering Metal shieldless Space saved by miniaturization Ready for automatic mounting
7.6 (3.8)
Unit : mm
5.2 (2.6) 1 2
R1.7
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power supply voltage Power dissipation Operating ambient temperature Storage temperature Symbol VCC PD Topr Tstg Ratings
- 0.5 to +7 200
- 20 to +60
- 30 to +70 Unit V m W ˚C ˚C
1: VO 2: VCC 3: GND 4: GND
Main Characteristics (Ta = 25˚C VCC = 5V)
Parameter Operating supply voltage Current consumption Maximum reception distance Low-level output voltage High-level output voltage Low-level pulse width High-level pulse width PNA4S01M Carrier frequency PNA4S02M PNA4S03M PNA4S04M
- 1
Symbol VCC ICC Lmax- 1 VOL- 2 VOH TWL- 1 TWH- 1
Conditions No signal condition L≤5.0m, 10L=400µA No signal condition L=5.0m, 16Pulse L=5.0m, 16Pulse min 4.7 1.8 5.0 typ 5.0 2.4 0.35 max 5.3 3.0 0.5 VCC 600 600
Unit V m A m V V µs µs
4.8 200 200
5.0 400 400 36.7 38.0 40.0 56.9 f0 k Hz
Fig.1 burst wave, L=Lmax, 16 pulses Carrier wave : fo
- 2
Fig.2 continuous wave, L≤Lmax Carrier wave : fo
400µs
400µs
Fig.1
Fig.2
Photo IC
PNA4S01M, PNA4S02M, PNA4S03M, PNA4S04M
Block Diagram
(20kΩ) amplifier AGC B.P.F demodulator parator
VCC RL VO constant voltage peak hold
Panasonic Transmitter Specifications
LED Transmission unit
PNZ323B 20cm 10kΩ V out 55m V V out 10kΩ...