PN150
PN150 is Silicon planar type For optical control systems manufactured by Panasonic.
s
- High sensitivity
- Wide spectral sensitivity characteristics, suited for detecting Ga As LEDs
- Low dark current
- Side-view plastic mold type package
(2.8) 12.8 min.
(1.8)
(1.0)
2-0.98±0.2 10.0 min. 2-0.45±0.15 0.45±0.15
- Absolute Maximum Ratings Ta = 25°C
Parameter Collector-emitter voltage (Base open) Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO IC PC Topr Tstg Rating 20 20 100
- 25 to +85
- 30 to +100 Unit V m A m W °C °C
(R1.75)
(2.54)
(1.2)
1: Emitter 2: Collector LSTLR102-003 Package
- Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter Photocurrent Dark current Peak emission wavelength Half-power angle Rise time
- 2 Fall time
- 2
- 1
Symbol ICE(L) ICEO λp θ tr tf VCE(sat) VCE = 10 V VCE = 10 V
Conditions VCE = 10 V, L = 500 lx
Min 1.0
Typ 3.0 0.01 800 35 4 4
Max
Unit m A µA nm ° µs µs
The angle from which photocurrent bees 50% VCC = 10 V, ICE(L) = 5 m A, RL = 100 Ω ICE(L) = 1 m A, L = 1 000 lx
Collector-emitter saturation voltage
- 1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. 3. This device is designed be dis regarded radiation. 4.
- 1: Source: Tungsten (color temperature 2 856 K)
- 2: Switching time measurement circuit
Sig. in VCC (Input pulse) 90% 10% tr tf tr: Rise time tf: Fall time
.. 50 Ω R
Sig. out
(Output pulse)
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004...
