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Panasonic Electronic Components Datasheet

PN150 Datasheet

Silicon planar type For optical control systems

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Phototransistors
PNZ150 (PN150)
Silicon planar type
For optical control systems
Features
High sensitivity
Wide spectral sensitivity characteristics, suited for detecting GaAs
LEDs
Low dark current
Side-view plastic mold type package
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-emitter voltage (Base open)
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
VCEO
IC
PC
Topr
Tstg
20
20
100
25 to +85
30 to +100
Unit
V
mA
mW
°C
°C
φ3.5±0.2
4.5±0.3
Unit: mm
4.2±0.3
(2.3) (1.9)
2-0.98±0.2
2-0.45±0.15
0.45±0.15
(2.54)
(R1.75)
(1.2)
12
1: Emitter
2: Collector
LSTLR102-003 Package
Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max
Photocurrent *1
ICE(L) VCE = 10 V, L = 500 lx
1.0 3.0
Dark current
ICEO VCE = 10 V
0.01 1.00
Peak emission wavelength
Half-power angle
λp VCE = 10 V
θ The angle from which photocurrent
800
35
becomes 50%
Rise time *2
Fall time *2
Collector-emitter saturation voltage *1
tr
tf
VCE(sat)
VCC = 10 V, ICE(L) = 5 mA, RL = 100
ICE(L) = 1 mA, L = 1 000 lx
4
4
0.2 0.5
Unit
mA
µA
nm
°
µs
µs
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be dis regarded radiation.
4. *1: Source: Tungsten (color temperature 2 856 K)
*2: Switching time measurement circuit
Sig. in
VCC
(Input pulse)
www.D5a0 taSheet4U.RcLoSimg. out (Output pulse) tr
90%
10%
tf
tr: Rise time
tf: Fall time
Publication date: April 2004
Note) The part number in the parenthesis shows conventional part number.
SHE00018BED
1


Panasonic Electronic Components Datasheet

PN150 Datasheet

Silicon planar type For optical control systems

No Preview Available !

www.DataSheet4U.com
PNZ150
PC Ta
120
100
80
60
40
20
0
20 0
20 40 60 80 100
Ambient temperature Ta (°C)
ICE(L) VCE
20 Ta = 25°C
T = 2 856 K
16
L = 2 000 lx
1 750 lx
12 1 500 lx
1 250 lx
1 000 lx
8
750 lx
4 500 lx
250 lx
100 lx
0
0 4 8 12 16 20 24
Collector-emitter voltage VCE (V)
ICE(L) L
102
VCE = 10 V
Ta = 25°C
T = 2 856 K
10
1
101
102
103
1
10 102 103
Illuminance L (lx)
104
ICE(L) Ta
102 VCE = 10 V
T = 2 856 K
ICEO Ta
10 VCE = 10 V
1
L = 1 000 lx
10 10 1
500 lx
10 2
Spectral sensitivity characteristics
100 VCE = 10 V
Ta = 25°C
80
60
40
20
140 0
40 80 120
Ambient temperature Ta (°C)
10
3
40
0
40 80
Ambient temperature Ta (°C)
120
0
200 400 600 800 1 000 1 200
Wavelength λ (nm)
Directivity characteristics
0° 10° 20°
100
104
tr ICE(L)
VCC = 10 V
Ta = 25°C
80 30°
103
60
40° 102
40 50°
60° 10
20 70°
80° 1
90°
RL = 1 k
500
100
www.DataSheet4U.com 101102
101 1
10
Photocurrent ICE(L) (mA)
102
tf ICE(L)
VCC = 10 V
104 Ta = 25°C
103
102
RL = 1 k
10 500
100
1
1011 02
101 1
10
Photocurrent ICE(L) (mA)
102
2 SHE00018BED


Part Number PN150
Description Silicon planar type For optical control systems
Maker Panasonic Semiconductor
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PN150 Datasheet PDF





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