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Panasonic Electronic Components Datasheet

PN108 Datasheet

(PN107) Silicon NPN Phototransistors

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Phototransistors
PNZ107, PNZ108 (PN107, PN108)
Silicon NPN Phototransistors
For optical control systems
PNZ107
4.6 0.15
Unit : mm
Glass lens
Features
High sensitivity : ICE(L) = 5 mA (min.) (at L = 100 lx)
Narrow directional sensitivity for effective use of light input
Fast response : tr = 5 µs (typ.)
Signal mixing capability using base pin (PNZ0108)
TO-18 standard type package
2- 0.45 0.05
2.54 0.25
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
* PNZ108 only
Symbol
VCEO
VCBO*
VECO
VEBO*
IC
PC
Topr
Tstg
Ratings
20
30
3
5
30
150
–25 to +85
–30 to +100
Unit
V
V
V
V
mA
mW
˚C
˚C
21
5.75 max.
1: Emitter
2: Collector
PNZ108
4.6 0.15
Unit : mm
Glass lens
3- 0.45 0.05
2.54 0.25
3
21
5.75 max.
1: Emitter
2: Base
3: Collector
Note) The part numbers in the parenthesis show conventional part number.
1


Panasonic Electronic Components Datasheet

PN108 Datasheet

(PN107) Silicon NPN Phototransistors

No Preview Available !

Phototransistors
PNZ107, PNZ108
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
ICEO
ICE(L)
λP
θ
VCE = 10V
VCE = 10V, L = 100 lx*1
VCE = 10V
Measured from the optical axis to the half power point
5
Rise time
Fall time
Collector saturation voltage
tr*2
tf*2
VCE(sat)
VCC = 10V, ICE(L) = 5mA
RL = 100
ICE(L) = 1mA, L = 500 lx*1
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
0.05
900
10
5
6
0.3
max
2
15
0.6
Unit
µA
mA
nm
deg.
µs
µs
V
Sig.IN
50
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
PC — Ta
200
160
120
80
40
0
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICE(L) — VCE
20
Ta = 25˚C
T = 2856K
16
12 100 lx
8
50 lx
4
10 lx
0
0 4 8 12 16 20 24
Collector to emitter voltage VCE (V)
10 3
10 2
10
1
10 –1
1
ICE(L) — L
VCE = 10V
Ta = 25˚C
T = 2856K
10 10 2
Illuminance L (lx)
10 3
2


Part Number PN108
Description (PN107) Silicon NPN Phototransistors
Maker Panasonic Semiconductor
Total Page 4 Pages
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