Small reverse current: IR < 5 µA (at VR = 30 V)
0.80±0.05
0.60+0.05.
0.03 0.80+0.05.
0.03 1
(0.60)
0.12+0.05.
0.02
(0.80)
(0.60)
0.01±0.01
5˚.
Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current.
Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFM IF.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
Schottky Barrier Diodes (SBD)
MA2SD32
Silicon epitaxial planar type
Unit: mm
For super high speed switching ■ Features
• IF(AV) = 200 mA rectification is possible. • Small reverse current: IR < 5 µA (at VR = 30 V)
0.80±0.05
0.60+0.05 –0.03 0.80+0.05 –0.03 1
(0.60)
0.12+0.05 –0.02
(0.80)
(0.60)
0.01±0.01
5˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg Rating 30 30 200 300 1 125 −55 to +125 Unit V V
5˚
2 0.30±0.05
0+0 –0.05
0.01±0.
MA2SD32 Datasheet
