Optimum for high frequency rectification because of its short reverse recovery time trr . 0.80±0.05
0.60+0.05.
0.03 0.80+0.05.
0.03 1
(0.60)
0.12+0.05.
0.02
(0.80)
(0.60)
0.01±0.01
5˚
2 0.30±0.05.
Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current.
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Schottky Barrier Diodes (SBD)
MA2SD30
Silicon epitaxial planar type
Unit: mm
For super high speed switching ■ Features
• Small reverse current: IR < 2 µA (at VR = 30 V) • Optimum for high frequency rectification because of its short reverse recovery time trr .
0.80±0.05
0.60+0.05 –0.03 0.80+0.05 –0.03 1
(0.60)
0.12+0.05 –0.02
(0.80)
(0.60)
0.01±0.01
5˚
2 0.30±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current
*
0+0 –0.05
5˚
Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg
Rating 30 30 100 200 1 125 −55 to +125
Unit V
(0.15)
V mA mA A °C °C
0.01±0.
MA2SD30 Datasheet
