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LN75X - GaAlAs Infrared Light Emitting Diode

Features

  • High-power output, high-efficiency : PO = 10 mW (typ. ) High-speed modulation capability : fC = 12 MHz 4.5±0.3 Not soldered ø3.5±0.2 4.8±0.3 2.4 2.4 4.2±0.3 2.3 1.9 2.8 1.8 1.0 12.8 min. 10.0 min. 2-0.98±0.2 2-0.45±0.15 0.45±0.15 2.54 R1.75 1.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
  • Symbol PD IF IFP.
  • Ratings 180 100 1 3.
  • 25 to +8.

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Datasheet Details

Part number LN75X
Manufacturer Panasonic
File Size 35.32 KB
Description GaAlAs Infrared Light Emitting Diode
Datasheet download datasheet LN75X Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Infrared Light Emitting Diodes LN75X GaAlAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 10 mW (typ.) High-speed modulation capability : fC = 12 MHz 4.5±0.3 Not soldered ø3.5±0.2 4.8±0.3 2.4 2.4 4.2±0.3 2.3 1.9 2.8 1.8 1.0 12.8 min. 10.0 min. 2-0.98±0.2 2-0.45±0.15 0.45±0.15 2.54 R1.75 1.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 180 100 1 3 –25 to +85 –30 to+100 Unit mW mA A V ˚C ˚C 1 2 1: Cathode 2: Anode VR Topr Tstg f = 100 Hz, Duty cycle = 0.
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