GN1010
GN1010 is GaAs N-Channel MES IC manufactured by Panasonic.
Features
0.95 q q q
General-use wide-band amplifier
2.9±0.2
0.5R
1.9±0.2
Low noise With bandwidth control pin
- 0.1 s Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power supply voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGS ID IG PD Tch Tstg Rating 6
- 4 45 3 200 150
- 55 to +150 Unit V V m A m A m W ˚C ˚C
1 : Source 2 : Drain 3:C 4 : Gate Mini Type Package (4-pin) s Equivalent Circuit
2 3 4
0 to 0.1
0.4±0.2
1 s Electrical Characteristics (Ta = 25˚C)
Parameter Drain current Noise figure Power gain Id B pression output Symbol IDD
- 1 NF
- 2 PG
- 2 PO
- 2 VDS= 3V VDS= 3V, f= 0.5GHz VDS= 3V, f=1.8GHz VDS= 3V, f= 0.5GHz VDS= 3V, f=1.8GHz VDS= 3V, f= 0.5GHz VDS= 3V, f=1.8GHz 5 8 Condition Min 5 Typ 30 2 10 9 15 Max 45 3 Unit m A d B d B d Bm
- 1
IDD rank classification Rank IDD(m A) P 5 to 20 Q 15 to 30 R 25 to 45
- 2
NF, PG, PO test circuit
C = 1000 p F Cc = 200 p F Cf = 27 p F Cc
C Cf Cc G
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