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GN01100B Datasheet GaAs MMIC

Manufacturer: Panasonic

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Overview

GaAs MMIC GN01100B GaAs IC (with built-in ferroelectric) Unit: mm 0.425 1.25±0.1 • Super miniature S-Mini 6-pin package (2125 size) • Transmitter amplifier : Wide dynamic range on low operation current : Gain control function built-in R0.2 1 0.65 2 0.65 3 0.425 2.0±0.1 0.2 6 - 0° to 10° Parameter Power supply voltage Circuit current Gate control voltage Max input power Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDD IDD VAGC PIN PD Topr T stg Ratings 5 80 0 to 3 −5 150 − 30 to + 90 −40 to + 120 Unit V mA V dBm mW °C °C EIAJ : SC-88 0 to 0.1 1 : RFIN 4 : VDD2 2 : V DD1 5 : GND 3 : VAGC 6 : VREF S Mini Type Package (6-pin) Marking Symbol : HU s Electrical Characteristics VDD1=VDD2=3.0 V, f=906 MHz, Ta=25 °C±3 °C Parameter Circuit current Power gain 1 Power gain 2 *1 *1 *1 Symbol IDD PG1 PG2 DR * 1, 2 Conditions VAGC=2.0 V, PIN=−20 dBm VAGC=2.0 V, PIN=−20 dBm VAGC=0.5 V, PIN=−20 dBm PG1 − PG2 Pin =− 20 dBm VAGC=2.0 V, POUT=5 dBm IS-95 modulation, 900 kHz Detuning 30 kHz Bandwidth VAGC= 2.0 V, Pout=5 dBm IS-95 modulation, 1.98 MHz Detuning 30 kHz Bandwidth min typ 37 0.7±0.1 0.9±0.1 s Absolute Maximum Ratings Ta=25 °C max 45 −5 Unit mA dB dB dB 20 23 − 10 Dynamic range Gain control sensitivity Adjacent channel leakage power (ACP) 1 *1, 3 Adjacent channel leakage power (ACP) 1 *1, 3 30 25 34 49 − 54 90 − 50 GS ACP1 dB/V dBc ACP2 − 74 − 65 dBc Note) *1 : Refer to measurement circuit.

*2 : {PG(VAGC=1.6V)[dB]− PG(V AGC=1.2V)[dB]/0.4[V] *3 : Design-guaranteed items.

0.2±0.

Key Features

  • 2.1±0.1 0.1 For the preamplifier of the transmitting section in a cellular phone Other communication equipment 0.2±0.05 0.12 +0.05.
  • 0.02 4 6 5 1 GN01100B s Measurement Circuit VREF VDD2 GaAs MMIC 10 nF 33 pF 33 pF 39 nH 5Ω Out 5 6 1 2 3 4 240 Ω 100 pF RFIN 33 pF 4.7 kΩ 10 nF 2 kΩ 10 nH 10 nF 33 nF 10 nF VAGC 2 pF VDD1 2.

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