The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Tentative DA26101
Silicon epitaxial planar type
For high speed switching circuits Marking Symbol : A1 Package Code : ML2-N3-B Absolute Maximum Ratings Ta = 25 °C
Parameter
Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current *1 Junction temperature Storage temperature Note: 1. *1 t = 1 s
DA26101
Total pages page
Symbol
VR VRM IF IFM IFSM Tj Tstg
Rating
80 80 100 225 500 125 -55 to +125
Unit
V V mA mA mA °C °C
Pin name
1. Cathode 2. Anode
Electrical Characteristics Ta = 25 °C±3 °C
Parameter
Forward voltage Reverse voltage Reverse current Terminal capacitance Reverse recovery time
*1
Symbol
VF VR IR Ct trr
Conditions
IF = 100 mA IR = 100 μA VR = 80 V VR = 0 V , f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.
DA26101 Datasheet
