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D2504 - 2SD2504

Key Features

  • s.
  • Low collector-emitter saturation voltage VCE(sat).
  • Large collector current IC.
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current.
  • Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC ICP PC Tj Tstg 15 10 10 5 9 750 150.
  • 55 to +150 Note).
  • : t = 380 µs.

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Full PDF Text Transcription (Reference)

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Transistors 2SD2504 Silicon NPN epitaxial planar type For low-frequency power amplification ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current * Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC ICP PC Tj Tstg 15 10 10 5 9 750 150 −55 to +150 Note) *: t = 380 µs Unit V V V A A mW °C °C www.DataSheet4U.com 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 0.7±0.2 12.9±0.5 0.7±0.1 0.45+–00..115 2.5+–00..26 2.5+–00..26 0.45+–00..115 1 23 2.3±0.