D2136 Datasheet | Panasonic

Features 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 - Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 60 6 3 5 1.5 150 - 55 to +150 Unit V V 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.4±0.1 V A A W °C °C 2.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package - Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage - 1 Symbol VCEO VBE ICES ICEO IEBO h FE1 - 2 h FE2 - 1 - 1 Conditions IC = 30 m A, IB = 0 VCE = 4 V, IC = 3 A VCE = 60 V, VBE = 0 VCE = 30 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A IC = 3 A, IB = 0.375 A VCE = 5 V, IE = - 0.1 A, f = 200 MHz IC = 1 A, IB1 = 0.1 A, IB2 = - 0.1 A Min 60 Typ Max Unit V 1.8 200 300 1 40 10 1.2 220 0.5 2.5 0.4 250 V µA µA m A  V MHz µs µs µs Collector-emitter cutoff current (Emitter-base short) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) f T ton tstg tf Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. - 1: Pulse measurement - 2: Rank classification Rank h FE1 P 40 to 90 Q 70 to 150 R 120 to 250 Publication date: September 2003 SJD00246BED Datasheet pdf -...