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Panasonic Electronic Components Datasheet

D2052 Datasheet

2SD2052

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Power Transistors
2SD2052
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1361
s Features
q Satisfactory foward current transfer ratio hFE vs. collector cur-
rent IC characteristics
q Wide area of safe operation (ASO)
q High transition frequency fT
q Optimum for the output stage of a HiFi audio amplifier
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
150
150
5
15
9
100
3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +155
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
hFE1
hFE2*
hFE3
VBE
VCE(sat)
fT
Cob
VCB = 150V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 7A
VCE = 5V, IC = 7A
IC = 7A, IB = 0.7A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz
*hFE2 Rank classification
Rank
Q
S
hFE2 60 to 120 80 to 160
P
100 to 200
Unit: mm
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
min typ max Unit
50 µA
50 µA
20
60 200
20
1.8 V
2.0 V
20 MHz
150 pF
1


Panasonic Electronic Components Datasheet

D2052 Datasheet

2SD2052

No Preview Available !

Power Transistors
PC — Ta
120
(1) TC=Ta
(2) With a 100 × 100 × 2mm
100 Al heat sink
(3) Without heat sink
(1) (PC=3W)
80
60
40
20
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
10
IC/IB=10
3 TC=100˚C
25˚C
1 –25˚C
0.3
0.1
0.03
0.01
0.003
0.001
0.1
0.3 1 3 10 30
Collector current IC (A)
100
10000
3000
1000
Cob — VCB
IE=0
f=1MHz
TC=25˚C
300
100
30
10
13
10 30 100
Collector to base voltage VCB (V)
IC — VCE
20
TC=25˚C
IB=1000mA
900mA
16 800mA
700mA
600mA
500mA
12 400mA
300mA
200mA
8
100mA
4 50mA
2SD2052
IC — VBE
20
VCE=5V
16
25˚C
12 TC=–25˚C
100˚C
8
4
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Base to emitter voltage VBE (V)
10000
3000
1000
hFE — IC
VCE=5V
300
TC=100˚C
100
25˚C
–25˚C
30
10
3
1
0.1 0.3 1 3 10 30 100
Collector current IC (A)
1000
300
100
fT — IC
VCE=5V
f=1MHz
TC=25˚C
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
100
30
ICP
10
IC
3
1
Non repetitive pulse
TC=25˚C
t=10ms
100ms
DC
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2


Part Number D2052
Description 2SD2052
Maker Panasonic Semiconductor
Total Page 3 Pages
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