Datasheet4U Logo Datasheet4U.com

D1992A - 2SD1992A

Key Features

  • Low collector to emitter saturation voltage VCE(sat).
  • Allowing supply with the radial taping 6.9±0.1 0.15 0.7 4.0 1.05 2.5±0.1 (1.45) ±0.05 0.8 0.65 max. 1.0 0.45.
  • 0.05 +0.1 I Absolute Maximum Ratings Ta = 25°C www. DataSheet4U. com Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Transistors 2SD1992A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB1321A I Features • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 6.9±0.1 0.15 0.7 4.0 1.05 2.5±0.1 (1.45) ±0.05 0.8 0.65 max. 1.0 0.45−0.05 +0.1 I Absolute Maximum Ratings Ta = 25°C www.DataSheet4U.com Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 60 50 7 1 500 600 150 −55 to +150 Unit V V V A mA mW °C °C 1 2 3 0.45−0.05 2.5±0.5 2.5±0.5 +0.