D1272
D1272 is 2SD1272 manufactured by Panasonic.
Features q q q
High foward current transfer ratio h FE Satisfactory linearity of foward current transfer ratio h FE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 200 150 6 2.5 1 0.1 40 2 150
- 55 to +150 Unit V V V A A A W ˚C ˚C
7.5±0.2
16.7±0.3
φ3.1±0.1
14.0±0.5 s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
1.4±0.1
1.3±0.2
Solder Dip
0.8±0.1
0.5 +0.2
- 0.1
2.54±0.25 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter TO- 220 Full Pack Package(a) s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency
(TC=25˚C)
Symbol ICBO IEBO VCEO h FE- VCE(sat) f T Conditions VCB = 200V, IE = 0 VEB = 6V, IC = 0 IC = 25m A, IB = 0 VCE = 4V, IC = 0.2A IC = 0.5A, IB = 0.02A VCE = 4V, IC = 0.1A, f = 10MHz 25 150 500 2000 1 V MHz min typ max 100 100 Unit µA µA V
- h
Rank classification
Rank h FE
500 to 1200 800 to 2000
Power Transistors
- Ta
50 0.5 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C IB=400µA 350µA 300µA 0.3 250µA 200µA 0.2 150µA 100µA 0.1 50µA 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12
2SD1272
- VCE
Collector to emitter saturation voltage VCE(sat) (V)
VCE(sat)
-...
