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C5931 - 2SC5931

Key Features

  • 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5.
  • High breakdown voltage: VCBO ≥ 1 700 V.
  • High speed switching: tf < 200 ns.
  • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ I Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.7±0.1 / Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip 5.45±0.3 e Collector-base voltage (Emitter open) VCBO 1 700 V pe) Collector-emitter voltage (E-B short) VCES 1 700 V nc d ge. ed.

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Power Transistors 2SC5931 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit: mm I Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 700 V • High speed switching: tf < 200 ns • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ I Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.7±0.1 / Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip 5.45±0.3 e Collector-base voltage (Emitter open) VCBO 1 700 V pe) Collector-emitter voltage (E-B short) VCES 1 700 V nc d ge. ed ty Collector-emitter voltage (Base open) VCEO 600 3.3±0.3 (2.0) 5.5±0.3 V sta tinu Emitter-base voltage (Collector open) VEBO 7 V a e cycle iscon Base current IB 7.